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| APT50M85B2VR APT50M85LVR 500V 56A 0.085 POWER MOS V (R) MOSFET B2VR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. T-MAXTM TO-264 LVR * TO-264 MAX Package * Faster Switching * Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Avalanche Energy Rated D G S All Ratings: TC = 25C unless otherwise specified. APT50M85B2VR_LVR UNIT Volts Amps 500 56 224 30 40 625 5.00 -55 to 150 300 56 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.085 25 250 100 2 4 (VGS = 10V, ID = 28A) Ohms A nA Volts 5-2004 050-5913 Rev A Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50M85B2VR_LVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 56A @ 25C VGS = 15V VDD = 250V ID = 56A @ 25C RG = 0.6 MIN TYP MAX UNIT 10500 1290 600 420 50 200 16 18 60 6 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns C 56 224 1.3 680 17 8 (Body Diode) (VGS = 0V, IS = -56A) Reverse Recovery Time (IS = -56A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -56A, dl S /dt = 100A/s) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.20 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.91mH, R = 25, Peak I = 56A j G L 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID56A di/dt 700A/s VR 500V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 , THERMAL IMPEDANCE (C/W) 0.20 0.9 0.15 0.7 0.5 0.3 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 5-2004 0.10 JC 050-5913 Rev A 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Z 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 160 140 120 100 80 60 40 20 0 APT50M85B2VR_LVR VGS =15 &10 V 6.5V RC MODEL Junction temp. (C) 0.0846 Power (watts) 0.116 Case temperature. (C) 0.249F 0.0122F 6V 5.5V 5V 4.5V 4V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO = 10V @ 28A V GS 120 100 80 60 TJ = -55C 40 TJ = +25C 20 0 TJ = +125C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE ID, DRAIN CURRENT (AMPERES) 1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 VGS=10V 0 60 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 I V D 1.2 = 28A = 10V GS 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -25 050-5913 Rev A 5-2004 224 ID, DRAIN CURRENT (AMPERES) 30,000 OPERATION HERE LIMITED BY RDS (ON) APT50M85B2VR_LVR Ciss 100 50 10,000 100S C, CAPACITANCE (pF) 10 5 TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 1,000 Coss Crss 1mS 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 56A 200 100 TJ =+150C TJ =+25C 10 12 8 VDS=100V VDS=250V VDS=400V 4 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE T-MAXTM (B2) Package Outline (B2VR) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline (LVR) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 5-2004 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source 050-5913 Rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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